KN2907S Datasheet. Specs and Replacement

Type Designator: KN2907S

SMD Transistor Code: ZDA

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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KN2907S datasheet

 8.1. Size:236K  kec

 kn2907 kn2907a.pdf pdf_icon

KN2907S

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 8.2. Size:38K  kec

 kn2907 a.pdf pdf_icon

KN2907S

SEMICONDUCTOR KN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAX G C 3.70 MAX D Complementary to the KN2222/2222A. D 0.45 E 1.00 ... See More ⇒

 8.3. Size:42K  kec

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KN2907S

SEMICONDUCTOR KN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. 1 G... See More ⇒

Detailed specifications: KM935, KN100, KN2222, KN2222AS, KN2222S, KN2907, KN2907A, KN2907AS, 13007, KN3903, KN3903S, KN3904, KN3904S, KN3905, KN3905S, KN3906, KN3906S

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