All Transistors. KN3904S Datasheet

 

KN3904S Datasheet, Equivalent, Cross Reference Search


   Type Designator: KN3904S
   SMD Transistor Code: ZCA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 KN3904S Transistor Equivalent Substitute - Cross-Reference Search

   

KN3904S Datasheet (PDF)

 ..1. Size:71K  kec
kn3904s.pdf

KN3904S KN3904S

SEMICONDUCTOR KN3904STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERS Low Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=50nA(Max.) ; @VCE=30V, VEB=3V.C 1.30 MAX2 Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=50mA, IB=5mA.1G 1.90H

 8.1. Size:71K  kec
kn3904.pdf

KN3904S KN3904S

SEMICONDUCTOR KN3904TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B CFEATURES Low Leakage Current: ICEX=50nA(Max.), @VCE=30V, VEB=3V.N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAXEK: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. B 4.80 MAXGC 3.70 MAXD Complementary to KN3906.D 0.45E 1.00F 1.27G 0.85H 0

 9.1. Size:72K  kec
kn3906s.pdf

KN3904S KN3904S

SEMICONDUCTOR KN3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERS Low Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.C 1.30 MAX2 Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA.1G 1.

 9.2. Size:71K  kec
kn3906.pdf

KN3904S KN3904S

SEMICONDUCTOR KN3906TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B CFEATURES Low Leakage Current: ICEX=-50nA(Max.), @VCE=-30V, VEB=-3V.N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAXEK: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. B 4.80 MAXGC 3.70 MAXD Complementary to KN3904.D 0.45E 1.00F 1.27G 0.8

 9.3. Size:425K  kec
kn3905s.pdf

KN3904S KN3904S

SEMICONDUCTOR KN3905STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA.1G

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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