All Transistors. 2N3903 Datasheet

 

2N3903 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3903
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92

 2N3903 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3903 Datasheet (PDF)

 ..1. Size:212K  motorola
2n3903 2n3904.pdf

2N3903 2N3903

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3903/DGeneral Purpose Transistors2N3903NPN Silicon*2N3904*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1

 ..2. Size:578K  fairchild semi
2n3903.pdf

2N3903 2N3903

2N3903C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 60 VCBOVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Conti

 ..3. Size:86K  samsung
2n3903.pdf

2N3903 2N3903

2N3903S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (2N3903)2N3903S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 2 (2N3903)

 ..4. Size:66K  central
2n3903 2n3904.pdf

2N3903

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..5. Size:177K  onsemi
2n3903 2n3904.pdf

2N3903 2N3903

2N3903, 2N3904General PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdcTotal Device Dissipation PD@ TA = 25

 ..6. Size:355K  cdil
2n3903 04.pdf

2N3903 2N3903

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3903 / 2N3904NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

 ..7. Size:151K  semtech
2n3903 2n3904.pdf

2N3903 2N3903

2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

 ..9. Size:159K  cn shenzhen jingyang
2n3903 2n3904.pdf

2N3903 2N3903

TITAN MICRO TITAN MICRO2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistorfor switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta

 9.1. Size:199K  motorola
2n3905 2n3906.pdf

2N3903 2N3903

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3905/DGeneral Purpose Transistors2N3905PNP Silicon*2N3906*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1

 9.2. Size:51K  philips
2n3904 3.pdf

2N3903 2N3903

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3904NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 15Philips Semiconductors Product specificationNPN switching transistor 2N3904FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

 9.3. Size:52K  philips
2n3906 3.pdf

2N3903 2N3903

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3906PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP switching transistor 2N3906FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

 9.4. Size:60K  st
2n3904.pdf

2N3903 2N3903

2N3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3904 2N3904 TO-92 / Bulk2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS2N3906TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

 9.5. Size:61K  st
2n3906.pdf

2N3903 2N3903

2N3906SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3906 2N3906 TO-92 / Bulk2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS2N3904TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

 9.6. Size:169K  fairchild semi
2n3904.pdf

2N3903 2N3903

October 20112N3904 / MMBT3904 / PZT3904NPN General Purpose AmplifierFeatures This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.2N3904 PZT3904MMBT3904CCEECBTO-92 SOT-23 SOT-223BMark:1AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symb

 9.7. Size:148K  fairchild semi
2n3906.pdf

2N3903 2N3903

October 20112N3906 / MMBT3906 / PZT3906PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Col

 9.8. Size:111K  fairchild semi
2n3904 mmbt3904 pzt3904.pdf

2N3903 2N3903

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

 9.9. Size:106K  fairchild semi
2n3906 mmbt3906 pzt3906.pdf

2N3903 2N3903

2N3906 MMBT3906 PZT3906CCEECC TO-92BBBESOT-223SOT-23Mark: 2APNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Vol

 9.10. Size:62K  fairchild semi
2n3905.pdf

2N3903 2N3903

2N3905C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 40 VCBOVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Conti

 9.11. Size:67K  central
2n3905 2n3906.pdf

2N3903

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.12. Size:225K  mcc
2n3906 to-92.pdf

2N3903 2N3903

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl

 9.13. Size:785K  mcc
2n3906.pdf

2N3903 2N3903

2N3906Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

 9.14. Size:260K  mcc
2n3904 to-92.pdf

2N3903 2N3903

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2N3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability ratingPurpose Am

 9.15. Size:324K  onsemi
2n3904.pdf

2N3903 2N3903

NPN General - PurposeAmplifier2N3904DescriptionThis device is designed as a general-purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to www.onsemi.com100 MHz as an amplifier.MAXIMUM RATINGS(Values are at TA = 25C unless otherwise noted.) (Note 1, Note 2)Symbol Parameter Value UnitVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas

 9.16. Size:478K  onsemi
2n3904bu 2n3904ta 2n3904tar 2n3904tf 2n3904tfr mmbt3904 pzt3904.pdf

2N3903 2N3903

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:173K  onsemi
2n3906.pdf

2N3903 2N3903

2N3906General PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR Pb-Free Packages are Available*32BASEMAXIMUM RATINGSRating Symbol Value Unit1EMITTERCollector - Emitter Voltage VCEO 40 VdcCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO-92CASE 29Total Device Dissipation @

 9.18. Size:474K  onsemi
2n3904 mmbt3904 pzt3904.pdf

2N3903 2N3903

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.19. Size:498K  onsemi
2n3906 mmbt3906 pzt3906.pdf

2N3903 2N3903

2N3906 / MMBT3906 / PZT3906PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierand switching applications at collector currents of 10 mAto 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCOrdering InformationPart Number Marking Package Packing Method Pack Quantity2N3906BU 2N3906 TO-92 3L Bulk 10000

 9.20. Size:434K  onsemi
2n3906bu 2n3906ta 2n3906tar 2n3906tf 2n3906tfr mmbt3906 pzt3906.pdf

2N3903 2N3903

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.21. Size:230K  utc
2n3906g.pdf

2N3903 2N3903

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box2N3906

 9.22. Size:250K  utc
2n3904.pdf

2N3903 2N3903

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906 FEATURES ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32N3904L-AB3-R 2N3904G-AB3-R SOT-89 B C E Tape Reel2N3904L-T92-B 2N3904G-T92-B TO-92 E B C

 9.23. Size:186K  utc
2n3906.pdf

2N3903 2N3903

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1* Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box

 9.24. Size:162K  auk
2n3904.pdf

2N3903 2N3903

2N3904NPN Silicon TransistorDescriptions PIN Connection General small signal application C Switching application Features B Low collector saturation voltage Collector output capacitance E Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25C Charact

 9.25. Size:173K  auk
2n3906n.pdf

2N3903 2N3903

2N3906NSemiconductor Semiconductor PNP Silicon TransistorDescriptions General small signal application Switching application Features Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki

 9.26. Size:52K  auk
2n3906.pdf

2N3903 2N3903

2N3906SemiconductorSemiconductorPNP Silicon TransistorDescriptions General small signal application Switching applicationFeatures Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904Ordering InformationType NO. Marking Package Code2N3906 2N3906 T0-92Outline Dimensions unit : mm3.450.14.50.12.250

 9.27. Size:186K  auk
2n3904n.pdf

2N3903 2N3903

2N3904NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General small signal application Switching application Features Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz Complementary pair with STA3906A Ordering Information Type NO. Mark

 9.28. Size:811K  no
2n3902t3.pdf

2N3903 2N3903

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

 9.30. Size:811K  no
2n3902t1.pdf

2N3903 2N3903

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

 9.31. Size:86K  semelab
2n3904-t18.pdf

2N3903 2N3903

2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230)5.31 (0.209)4.95 (0.195)4.52 (0.178)GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES SILICON NPN EPITAXIAL TRANSISTOR0.48 (0.019) HERMETIC TO18 PACKAGE 0.41 (0.016)dia. HI-REL SCREENING OPTIONS AVAILABLE HIGH SPEED SATURATED SWITCHING2.54 (0.100)Nom.APPLICATIONS A h

 9.32. Size:378K  secos
2n3904.pdf

2N3903 2N3903

2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) G H1Emitter 111 Collector Current ICM: 200mA 2Base 222 Collector Base Voltage V(BR)CBO: 60V 3Collector 333JA DCLASSIFICATION OF hFE(1) Mi

 9.33. Size:376K  secos
2n3906.pdf

2N3903 2N3903

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) AD Collector Current ICM: -200mA Collector Base Voltage V(BR)CBO: -40V BCLASSIFICATION OF hFE E CFProduct-Rank 2N3906-O 2N3906-YRange 100~

 9.34. Size:158K  bocasemi
2n3902.pdf

2N3903 2N3903

Boca Semiconductor Corp. (BSC)http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

 9.35. Size:354K  cdil
2n3905 06.pdf

2N3903 2N3903

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3905 / 2N3906PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

 9.36. Size:509K  jiangsu
2n3904.pdf

2N3903 2N3903

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE NPN silicon epitaxial planar transistor for switching and 1. EMITTER Amplifier applications 2. BASE As complementary type, the PNP transistor 2N3906 is Recommended 3. COLLECTOR This transistor is also available in the SOT-23 case wit

 9.37. Size:3052K  jiangsu
2n3906.pdf

2N3903 2N3903

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

 9.38. Size:91K  kec
2n3906e.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.27+0.10/-0.05_@VCE=-30V, VEB=-3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.

 9.39. Size:76K  kec
2n3906c.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(

 9.40. Size:51K  kec
2n3904.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Max.)

 9.41. Size:92K  kec
2n3904v.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=30V, VEB=3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8 0.05

 9.42. Size:91K  kec
2n3904e.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.27+0.10/-0.05_@VCE=30V, VEB=3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.H

 9.43. Size:50K  kec
2n3906u.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=-30V, VEB=-3V.G 0.65Excellent DC Current Gain Linearity.H 0.

 9.44. Size:657K  kec
2n3904a.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.F 1.27G 0.85Low Collector Outp

 9.45. Size:73K  kec
2n3904c.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXD Excellent DC Current Gain Linearity.D 0.45E 1.00 Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Ma

 9.46. Size:51K  kec
2n3906.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(M

 9.47. Size:685K  kec
2n3904s.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=50nA(Max.), IBL=50nA(Max.)E 2.40+0.30/-0.201@VCE=30V, VEB=3V.G 1.90H 0.95Excellent DC Current Gain Linearity.J 0.13+

 9.48. Size:92K  kec
2n3906v.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=-30V, VEB=-3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8

 9.49. Size:687K  kec
2n3906s.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+FEATURES A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)E 2.40+0.30/-0.201G 1.90@VCE=-30V, VEB=-3V.H 0.95Excellent DC Current Gain Linearity.J 0

 9.50. Size:51K  kec
2n3904u.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=30V, VEB=3V.G 0.65Excellent DC Current Gain Linearity.H 0.15+0

 9.51. Size:699K  kec
2n3904sc.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3904SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=50nA(Max.), IBL=50nA(Max.)@VCE=30V, VEB=3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.Complementary to 2N3906SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMB

 9.52. Size:561K  kec
2n3906a.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.F 1.27G 0.85Low Collect

 9.53. Size:700K  kec
2n3906sc.pdf

2N3903 2N3903

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERIST

 9.54. Size:307K  lge
2n3904.pdf

2N3903 2N3903

2N3904(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25 unless otherwise note

 9.55. Size:307K  lge
2n3906.pdf

2N3903 2N3903

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note

 9.56. Size:612K  wietron
2n3904.pdf

2N3903 2N3903

2N3904NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC200 mAdcPD 625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

 9.57. Size:541K  wietron
2n3906.pdf

2N3903 2N3903

2N3906PNP General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, T

 9.58. Size:51K  hsmc
h2n3906.pdf

2N3903 2N3903

Spec. No. : HE6240HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3906PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3906 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

 9.59. Size:50K  hsmc
h2n3904.pdf

2N3903 2N3903

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3904NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3904 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

 9.60. Size:383K  shenzhen
2n3904.pdf

2N3903 2N3903

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Fre

 9.61. Size:245K  shenzhen
2n3906.pdf

2N3903 2N3903

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

 9.62. Size:953K  blue-rocket-elect
2n3904.pdf

2N3903 2N3903

2N3904 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

 9.63. Size:978K  blue-rocket-elect
2n3906.pdf

2N3903 2N3903

2N3906 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

 9.64. Size:148K  semtech
2n3905 2n3906.pdf

2N3903 2N3903

2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

 9.65. Size:387K  first silicon
2n3906e.pdf

2N3903 2N3903

SEMICONDUCTOR2N3906ETECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONShippingDevice Marking22N3906E 2A 3000/Tape & Reel 1SC 89MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 4

 9.66. Size:437K  first silicon
2n3906 to92.pdf

2N3903 2N3903

SEMICONDUCTOR2N3906TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

 9.67. Size:603K  first silicon
2n3906u.pdf

2N3903 2N3903

SEMICONDUCTOR2N3906UTECHNICAL DATAGeneral Purpose Transistors PNP Silicon FEATURESWe declare that the material of product compliant withRoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping 2N3906U 2A 3000/Tape&Reel12SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25)Parameter Symbol Limits UnitCollectorEmitte

 9.68. Size:227K  first silicon
2n3904s.pdf

2N3903 2N3903

SEMICONDUCTOR2N3904STECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Marking Shipping32N3904S 1AM 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 Vdc3COLLECTOREmitterBase Vo

 9.69. Size:398K  first silicon
2n3904 to92.pdf

2N3903 2N3903

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

 9.70. Size:199K  first silicon
2n3906s.pdf

2N3903 2N3903

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40

 9.71. Size:398K  first silicon
2n3904g.pdf

2N3903 2N3903

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

 9.72. Size:201K  first silicon
2n3904u.pdf

2N3903 2N3903

SEMICONDUCTOR2N3904UTECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATION3Device Marking ShippingAM2N3904U 3000/Tape & Reel12SC-70 / SOT 323 MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 Vdc3COLLECTORCollectorBase Voltage VCBO 60 Vdc1Emi

 9.73. Size:176K  aeroflex
2n3902 2n5157.pdf

2N3903 2N3903

NPN High Power Silicon Transistors2N3902 & 2N5157Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N3902 2N5157 UnitsCollector - Emitter Voltage VCEO 400 500 VdcEmitter - Base Voltage VEBO5.0 6.0 VdcCollector - Base Voltage VCBO 7.0 VdcBase Current IB 2.0 AdcCollector Current IC 3.5 AdcTotal

 9.74. Size:69K  comchip
2n3906-g.pdf

2N3903 2N3903

General Purpose Transistor2N3906-G (PNP)RoHS DeviceTO-92Features -PNP silicon epitaxial planar transistor for 0.185(4.70)switching and amplifier application.0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min.0.055 (1.14)0.020(0.51)0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55)0.015(0.38) -This transistor is available in the S

 9.75. Size:1716K  slkor
2n3904.pdf

2N3903 2N3903

2N3904 / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

 9.76. Size:1737K  slkor
2n3906.pdf

2N3903 2N3903

2N3906 / DescriptionsTO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

 9.78. Size:1774K  jsmsemi
2n3904.pdf

2N3903 2N3903

2N3904NPN / Pinning / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. PIN1Collector / Features PIN 2Base 1PIN 3Emitter 23 Low current, Low voltage. / Equivalent Circuit / Applications

 9.79. Size:2011K  jsmsemi
2n3906.pdf

2N3903 2N3903

2N3906PNP / Descriptions / Pinning TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. PIN1Collector PIN 2Base / Features PIN 3Emitter 123 Low current, Low voltage. / Equivalent Circuit / Applications

 9.80. Size:1422K  cn cbi
2n3906u.pdf

2N3903 2N3903

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltageMARKING: 2AMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -6 VIC Collector Current -Continuous -0.2 APC Collector Power Dissipation 0.5 WTh

 9.81. Size:1481K  cn cbi
2n3904u.pdf

2N3903 2N3903

Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES U Compliment to 2N3906 Low current Low voltage MARKING: 1A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.

 9.82. Size:202K  inchange semiconductor
2n3906.pdf

2N3903 2N3903

isc Silicon PNP Power Transistor 2N3906DESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )NPN complement to Type 2N3904.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

 9.83. Size:207K  inchange semiconductor
2n3906s.pdf

2N3903 2N3903

isc Silicon PNP Power Transistor 2N3906SDESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )APPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuo

 9.84. Size:185K  inchange semiconductor
2n3902.pdf

2N3903 2N3903

isc Silicon NPN Power Transistor 2N3902DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2N389A , 2N389A-1 , 2N38A , 2N39 , 2N3900 , 2N3900A , 2N3901 , 2N3902 , 2SC1740 , 2N3904 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3906 , 2N3906CSM , 2N3907 .

 

 
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