KSA643G
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSA643G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package:
TO92
KSA643G
Transistor Equivalent Substitute - Cross-Reference Search
KSA643G
Datasheet (PDF)
8.1. Size:40K fairchild semi
ksa643.pdf
KSA643Low Frequency Power Amplifier Collector Power Dissipation: PC =500mW Complement to KSD261 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Co
8.2. Size:199K lge
ksa643.pdf
KSA643(PNP) TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Collector dissipation Complement to KSD261 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -20 VVEBO Emitter-Base Voltage -5 VDimensions in inches and (millimeters)IC Collector Current -Con
9.1. Size:39K fairchild semi
ksa642.pdf
KSA642Low Frequency Power Amplifier Complement to KSD227 Collector Power Dissipation : PC = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
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, 2N3207
, B772
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, 2N3209CSM
, 2N3209DCSM
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, 2N3211
.