All Transistors. KSA812G Datasheet

 

KSA812G Datasheet and Replacement


   Type Designator: KSA812G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236
 

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KSA812G Datasheet (PDF)

 8.1. Size:58K  fairchild semi
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KSA812G

KSA812Low Frequency Amplifier Collector-Base Voltage : VCBO= -60V3 Complement to KSC16232SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Cur

Datasheet: KSA709Y , KSA733 , KSA733G , KSA733L , KSA733O , KSA733R , KSA733Y , KSA812 , 2SD1555 , KSA812L , KSA812O , KSA812Y , KSA910 , KSA910O , KSA910R , KSA910Y , KSA916 .

History: 2SD363A | KT624AM-2 | MJD117-1G | 2SC2915 | 2SD160 | BC159 | STA322A

Keywords - KSA812G transistor datasheet

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