KSB1150 Datasheet. Specs and Replacement
Type Designator: KSB1150
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO126
KSB1150 Substitution
- BJT ⓘ Cross-Reference Search
KSB1150 datasheet
KSB1151 Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation PC=1.3W (Ta=25 C) Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter V... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER Low Collector-Emitter Saturation Voltage Large Collector Current 2. COLLECTOR High Power Dissipation Complement to KSD1691 3. BASE Equivalent Circuit B1151=Device code Solid dot = Green molding compound device,... See More ⇒
Detailed specifications: KSB1121R, KSB1121S, KSB1121T, KSB1121U, KSB1149, KSB1149O, KSB1149R, KSB1149Y, TIP31, KSB1151, KSB1151G, KSB1151O, KSB1151Y, KSB1330, KSB1366, KSB1366G, KSB1366Y
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