KSB1151Y Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB1151Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO126
KSB1151Y Transistor Equivalent Substitute - Cross-Reference Search
KSB1151Y Datasheet (PDF)
ksb1151.pdf
KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25C) Complement to KSD 1691TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter V
ksb1151.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksb1151.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsKSB1151 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER Low Collector-Emitter Saturation Voltage Large Collector Current 2. COLLECTOR High Power Dissipation Complement to KSD1691 3. BASE Equivalent Circuit B1151=Device code Solid dot = Green molding compound device,
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
