KSB601 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB601
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO220
KSB601 Transistor Equivalent Substitute - Cross-Reference Search
KSB601 Datasheet (PDF)
..1. Size:48K fairchild semi
ksb601.pdf
ksb601.pdf
KSB601Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 100 VVCEO Collector-Emitter Voltage - 100 VVEBO Emitter-Base Voltage - 7 VIC C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
