KSB601 Datasheet. Specs and Replacement

Type Designator: KSB601

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8000

Noise Figure, dB: -

Package: TO220

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KSB601 datasheet

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KSB601

KSB601 Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC C... See More ⇒

Detailed specifications: KSB546Y, KSB564, KSB564A, KSB564AG, KSB564AO, KSB564AY, KSB595, KSB596, 2SC5198, KSB601O, KSB601R, KSB707, KSB707O, KSB707R, KSB707Y, KSB708, KSB708O

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