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KSB795O Specs and Replacement


   Type Designator: KSB795O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO126

 KSB795O Transistor Equivalent Substitute - Cross-Reference Search

   

KSB795O detailed specifications

 9.1. Size:429K  fairchild semi
 ksb798.pdf pdf_icon

KSB795O

July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current IC = -1A Collector Power Dissipation PC = 2W Marking 7 9 8 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VC... See More ⇒

Detailed specifications: KSB772O , KSB772R , KSB772Y , KSB794 , KSB794O , KSB794R , KSB794Y , KSB795 , BD222 , KSB795R , KSB795Y , KSB810 , KSB810G , KSB810O , KSB810Y , KSB811 , KSB811G .

Keywords - KSB795O transistor specs

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