KSB810 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB810
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
KSB810 Transistor Equivalent Substitute - Cross-Reference Search
KSB810 Datasheet (PDF)
ksb810.pdf
KSB810Audio Frequency Amplifier Complement to KSD1020TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5.0 VIC Collector Current (DC) -700 mAICP * Collector Current
ksb811.pdf
KSB811Audio Frequency Power Amplifier Complement to KSD1021 Collector Current : IC= -1A Collector Power Dissipation : PC=350mWTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitt
ksb811.pdf
KSB811 PNP EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERTO-92S Complement to KSD1021 Collector Current IC= -1A Collector Dissipation PC=350mWABSOLUTE MAXIMUM RATING(T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -1.0 ACollector Dissip
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
