KSB906 Datasheet. Specs and Replacement
Type Designator: KSB906 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO252
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KSB906 Substitution
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KSB906 datasheet
KSB906 Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col... See More ⇒
KSB907 Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V... See More ⇒
Detailed specifications: KSB811O, KSB811Y, KSB817, KSB817O, KSB817Y, KSB834, KSB834O, KSB834Y, 2SA1943, KSB906O, KSB906Y, KSB907, KSC1008, KSC1008G, KSC1008R, KSC1008Y, KSC1009
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