All Transistors. KSB906 Datasheet

 

KSB906 Datasheet and Replacement


   Type Designator: KSB906
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO252
 

 KSB906 Substitution

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KSB906 Datasheet (PDF)

 ..1. Size:66K  fairchild semi
 ksb906.pdf pdf_icon

KSB906

KSB906Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD12211I-PAK1. Base 2. Collector 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col

 9.1. Size:54K  fairchild semi
 ksb907.pdf pdf_icon

KSB906

KSB907Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD12221I-PACK1. Base 2. Collector 3. EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V

Datasheet: KSB811O , KSB811Y , KSB817 , KSB817O , KSB817Y , KSB834 , KSB834O , KSB834Y , BC337 , KSB906O , KSB906Y , KSB907 , KSC1008 , KSC1008G , KSC1008R , KSC1008Y , KSC1009 .

History: 2N2005 | UMF5N | MMUN2114L | 50A02SS-TL-E | JC550 | BFV82B | 2SB725

Keywords - KSB906 transistor datasheet

 KSB906 cross reference
 KSB906 equivalent finder
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