KSC1009 Specs and Replacement
Type Designator: KSC1009
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
KSC1009 Substitution
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KSC1009 datasheet
KSC1009 High Voltage Amplifier High Collector-Base Voltage VCBO=160V Collector Current IC=700mA Collector Power Dissipation PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted S... See More ⇒
September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage VCBO=80V. Collector Current IC=700mA Collector Power Dissipation PC=800mW TO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C... See More ⇒
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Detailed specifications: KSB906 , KSB906O , KSB906Y , KSB907 , KSC1008 , KSC1008G , KSC1008R , KSC1008Y , TIP42C , KSC1009G , KSC1009R , KSC1009Y , KSC1070 , KSC1072 , KSC1096 , KSC1098 , KSC1173 .
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