KSC1173 Datasheet. Specs and Replacement
Type Designator: KSC1173 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220
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KSC1173 datasheet
August 2009 KSC1173 NPN Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current IC=3A Collector Dissipation PC=10W (TC=25 C) Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC... See More ⇒
KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) High Current Gain Bandwidth Product fT=700MHz High Power Gain GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 ... See More ⇒
Detailed specifications: KSC1009, KSC1009G, KSC1009R, KSC1009Y, KSC1070, KSC1072, KSC1096, KSC1098, 2SD1047, KSC1173O, KSC1173Y, KSC1187, KSC1187O, KSC1187R, KSC1187Y, KSC1188, KSC1222
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