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KSC1173 Specs and Replacement


   Type Designator: KSC1173
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 KSC1173 Transistor Equivalent Substitute - Cross-Reference Search

   

KSC1173 detailed specifications

 ..1. Size:248K  fairchild semi
 ksc1173.pdf pdf_icon

KSC1173

August 2009 KSC1173 NPN Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current IC=3A Collector Dissipation PC=10W (TC=25 C) Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC... See More ⇒

 9.1. Size:48K  fairchild semi
 ksc1187.pdf pdf_icon

KSC1173

KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) High Current Gain Bandwidth Product fT=700MHz High Power Gain GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 ... See More ⇒

Detailed specifications: KSC1009 , KSC1009G , KSC1009R , KSC1009Y , KSC1070 , KSC1072 , KSC1096 , KSC1098 , 2SD1047 , KSC1173O , KSC1173Y , KSC1187 , KSC1187O , KSC1187R , KSC1187Y , KSC1188 , KSC1222 .

Keywords - KSC1173 transistor specs

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