KSC2517Y Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC2517Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
KSC2517Y Transistor Equivalent Substitute - Cross-Reference Search
KSC2517Y Datasheet (PDF)
ksc2500.pdf
KSC2500Medium Power Amplifier & Low SaturationTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVCEO Collector-Emitter Voltage 10 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 2 AICP * Co
ksc2500.pdf
KSC2500 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER AMPLIFIERTO-92LLOW SATURATIONABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCES 30 VCollector-Emitter Voltage VCBO 10 VEmitter-Base Voltage VEBO 6 VCollector Current (DC) IC 2 ACollector Current (Pulse) IC 5 ABase Current AIB 0.5Collecto
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