All Transistors. KSC2752N Datasheet

 

KSC2752N Datasheet, Equivalent, Cross Reference Search


   Type Designator: KSC2752N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO126

 KSC2752N Transistor Equivalent Substitute - Cross-Reference Search

   

KSC2752N Datasheet (PDF)

 7.1. Size:56K  fairchild semi
ksc2752.pdf

KSC2752N
KSC2752N

KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 0.5 A ICP *Collector Current (Pulse) 1

 7.2. Size:208K  onsemi
ksc2752.pdf

KSC2752N
KSC2752N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:77K  fairchild semi
ksc2755.pdf

KSC2752N
KSC2752N

KSC2755RF AMP, FOR VHF &TV TUNER Low NF, High GPE3 Forward AGC Capability to 30 dB NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz21 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

 8.2. Size:77K  fairchild semi
ksc2757.pdf

KSC2752N
KSC2752N

KSC2757Mixer Oscillator for VHF Tuner High Current Gain Bandwidth Product : fT=1100MHz (TYP)321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Collector Current 5

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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