KSC2982B Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC2982B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
KSC2982B Transistor Equivalent Substitute - Cross-Reference Search
KSC2982B Datasheet (PDF)
7.1. Size:428K fairchild semi
ksc2982.pdf
ksc2982.pdf
July 2005KSC2982NPN Epitaxial Silicon TransistorStrobe Flash & Medium Power Amplifier Excellent hFE Linearity : hFE1=140 ~ 600 Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V Collector Dissipation : PC=1~2W in Mounted on Ceramic BoardMarking2 9 8 2P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
