KSC2982C Specs and Replacement
Type Designator: KSC2982C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT89
KSC2982C Substitution
- BJT ⓘ Cross-Reference Search
KSC2982C datasheet
July 2005 KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier Excellent hFE Linearity hFE1=140 600 Low Collector-Emitter Saturation Voltage VCE(sat)=0.5V Collector Dissipation PC=1 2W in Mounted on Ceramic Board Marking 2 9 8 2 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings ... See More ⇒
Detailed specifications: KSC2874, KSC2881O, KSC2881Y, KSC2883O, KSC2883Y, KSC2982, KSC2982A, KSC2982B, B772, KSC2982D, KSC3073, KSC3073O, KSC3073Y, KSC3074, KSC3074O, KSC3074Y, KSC3076
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