2N3953
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3953
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 1300
MHz
Collector Capacitance (Cc): 1.8
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO72
2N3953
Transistor Equivalent Substitute - Cross-Reference Search
2N3953
Datasheet (PDF)
9.2. Size:55K vishay
2n3958.pdf
2N3958Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)1.0 to 4.5 50 1 50 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-
9.3. Size:67K interfet
2n3954 2n3955 2n3956.pdf
Databook.fxp 1/14/99 11:29 AM Page B-501/99 B-52N3954, 2N3955, 2N3956N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Tem
9.4. Size:66K interfet
2n3957 2n3958.pdf
Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature
Datasheet: 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.