2N3953 Datasheet. Specs and Replacement
Type Designator: 2N3953 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1300 MHz
Collector Capacitance (Cc): 1.8 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
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2N3953 datasheet
2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-... See More ⇒
Databook.fxp 1/14/99 11 29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Tem... See More ⇒
Databook.fxp 1/14/99 11 30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Temperature... See More ⇒
Detailed specifications: 2N3944, 2N3945, 2N3946, 2N3947, 2N3948, 2N394A, 2N395, 2N3950, 2SC3320, 2N3959, 2N396, 2N3960, 2N3960UB, 2N3961, 2N3962, 2N3962CSM, 2N3963
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