KSD1020 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD1020
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
KSD1020 Transistor Equivalent Substitute - Cross-Reference Search
KSD1020 Datasheet (PDF)
ksd1020.pdf
KSD1020Audio Frequency Amplifier Complement to KSB810TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current (DC) 700 mAICP * Collector Current (Puls
ksd1021.pdf
KSD1021Audio Frequency Power Amplifier Complement to KSB811 Collector Current : IC=1A Collector Dissipation : PC=350mWTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Vo
ksd1021.pdf
KSD1021 NPN EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERTO-92 Complement to KSB811 Collector Current IC=1A Collector Dissipation PC=350mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 30 VEmitter-Base Voltage VEBO 5 VCollector Current IC 1 ACollector Dissipation
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
