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KSD986Y Specs and Replacement

Type Designator: KSD986Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20000

Noise Figure, dB: -

Package: TO126

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KSD986Y datasheet

 9.1. Size:50K  fairchild semi

 ksd985.pdf pdf_icon

KSD986Y

KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage KSD985 60 V KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C... See More ⇒

Detailed specifications: KSD882Y , KSD985 , KSD985O , KSD985R , KSD985Y , KSD986 , KSD986O , KSD986R , TIP142 , KSE13003 , KSE13004 , KSE13005 , KSE13005F , KSE13006 , KSE13007 , KSE13007F , KSE13008 .

History: MJE13005DK | MJE13005DP5 | 13005EC | KSH13007A | KSH13009 | 2SD2470 | KSH13004

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