KSE702 Datasheet. Specs and Replacement

Type Designator: KSE702  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 KSE702 Substitution

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KSE702 datasheet

 9.1. Size:52K  fairchild semi

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KSE702

KSE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB... See More ⇒

Detailed specifications: KSE45H-11, KSE45H-2, KSE45H-4, KSE45H-5, KSE45H-7, KSE45H-8, KSE700, KSE701, TIP42C, KSE703, KSE800, KSE801, KSE802, KSE803, KSH112, KSH112I, KSH117

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