All Transistors. KSE702 Datasheet

 

KSE702 Datasheet and Replacement


   Type Designator: KSE702
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
 

 KSE702 Substitution

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KSE702 Datasheet (PDF)

 9.1. Size:52K  fairchild semi
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KSE702

KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to KSE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB

Datasheet: KSE45H-11 , KSE45H-2 , KSE45H-4 , KSE45H-5 , KSE45H-7 , KSE45H-8 , KSE700 , KSE701 , TIP42C , KSE703 , KSE800 , KSE801 , KSE802 , KSE803 , KSH112 , KSH112I , KSH117 .

History: PDTC114ET | DTA115TCA | ASY61 | 2SB76 | 2SD2036 | NB021EY | ASZ23

Keywords - KSE702 transistor datasheet

 KSE702 cross reference
 KSE702 equivalent finder
 KSE702 lookup
 KSE702 substitution
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