KSE802 Datasheet. Specs and Replacement

Type Designator: KSE802  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 KSE802 Substitution

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KSE802 datasheet

 ..1. Size:169K  onsemi

kse800 kse801 kse802 kse803.pdf pdf_icon

KSE802

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:52K  fairchild semi

kse800.pdf pdf_icon

KSE802

KSE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Coll... See More ⇒

 9.2. Size:51K  fairchild semi

kse800-803.pdf pdf_icon

KSE802

KSE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Coll... See More ⇒

 9.3. Size:62K  samsung

kse800.pdf pdf_icon

KSE802

NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-126 MIN hFE= 750 I = -1.5 and -2.0A DC C MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO KSE800/801 60 V KSE802/803 80 V Collector-Emitter Voltage VCEO K... See More ⇒

Detailed specifications: KSE45H-7, KSE45H-8, KSE700, KSE701, KSE702, KSE703, KSE800, KSE801, TIP31C, KSE803, KSH112, KSH112I, KSH117, KSH117I, KSH122, KSH122I, KSH127

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