KSH112I Datasheet. Specs and Replacement
Type Designator: KSH112I 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: TO252
KSH112I Substitution
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KSH112I datasheet
KSH112 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP112 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted... See More ⇒
KSH112 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT D-PAK APPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix) 1 Electrically Similar to Popular TIP112 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Un... See More ⇒
isc Silicon NPN Power Transistor KSH112 DESCRIPTION High DC current gain Built-in a damper diode at E-C Electrically similar to popular TIP112 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: KSE701, KSE702, KSE703, KSE800, KSE801, KSE802, KSE803, KSH112, 13003, KSH117, KSH117I, KSH122, KSH122I, KSH127, KSH127I, KSH13003, KSH13003I
Keywords - KSH112I pdf specs
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