KSH2955
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH2955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 70
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 2
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO252
KSH2955
Transistor Equivalent Substitute - Cross-Reference Search
KSH2955
Datasheet (PDF)
..1. Size:49K fairchild semi
ksh2955.pdf
KSH2955General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix)D-PAK I-PAK11 Electrically Similar to Popular KSE2955T1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT =
..2. Size:23K samsung
ksh2955.pdf
KSH2955 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATONSD-PACK FOR SURFACE MOUNTAPPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, -I Suffix) 1 Electrically Similar to Popular KSE2955 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product :1. Base 2.
..3. Size:249K inchange semiconductor
ksh2955.pdf
isc Silicon PNP Power Transistor KSH2955DESCRIPTIONHigh DC current gainLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose amplifier low speed switching applicat
9.1. Size:50K fairchild semi
ksh29c.pdf
KSH29/29CGeneral Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP29 and TIP29CD-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Uni
9.2. Size:22K samsung
ksh29.pdf
KSH29/29C NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONSLoad Formed for Surface Mount Application(No Suffix)Straight Lead (I.ACK, - I Suffi x)1Electrically Similar to Popular TIP29 and TIP29C1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK
Datasheet: 2SA1803O
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