KSH350I Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH350I
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
KSH350I Transistor Equivalent Substitute - Cross-Reference Search
KSH350I Datasheet (PDF)
ksh350.pdf
KSH350High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO
ksh350.pdf
KSH350 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSD-PAKDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( -I Suffix)1ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 300 V Collector Emitter Voltage VCEO - 300 VI-PAK
ksh350.pdf
isc Silicon PNP Power Transistor KSH350DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
