KSH45H11I Specs and Replacement
Type Designator: KSH45H11I
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO252
KSH45H11I Substitution
- BJT ⓘ Cross-Reference Search
KSH45H11I datasheet
KSH45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular KSE45H 1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Vo... See More ⇒
KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING D-PAK SUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.PACK, - I Suffix) 1 Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1. Base 2. Colle... See More ⇒
isc Silicon PNP Power Transistor KSE45H11 DESCRIPTION Collector-Emitter Breakdown Voltage V = -80V(Min) (BR)CEO High DC Current Gain h = 60(Min)@ (V = -1V, I = -2A) FE CE C Low Saturation Voltage- V = -1.0V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Complement to Type KSE44H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO... See More ⇒
Detailed specifications: KSH41C, KSH41CI, KSH42, KSH42C, KSH42CI, KSH44H11, KSH44H11I, KSH45H11, BC639, KSH47, KSH47I, KSH50, KSH50I, KSP05, KSP06, KSP10, KSP12
Keywords - KSH45H11I pdf specs
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History: 2SC1482A | BC858CWT1 | 2N612
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