All Transistors. KSR1001 Datasheet

 

KSR1001 Datasheet and Replacement


   Type Designator: KSR1001
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 

 KSR1001 Substitution

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KSR1001 Datasheet (PDF)

 ..1. Size:42K  samsung
ksr1001.pdf pdf_icon

KSR1001

KSR1001 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=4.7 ) Complement to KSR2001ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.1. Size:42K  samsung
ksr1008.pdf pdf_icon

KSR1001

KSR1008 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR2008ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Vo

 8.2. Size:43K  samsung
ksr1007.pdf pdf_icon

KSR1001

KSR1007 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=47 ) Complement to KSR2007ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Vo

 8.3. Size:42K  samsung
ksr1006.pdf pdf_icon

KSR1001

KSR1006 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR2006ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Vo

Datasheet: KSP77 , KSP8097 , KSP8098 , KSP8099 , KSP8598 , KSP8599 , KSP92 , KSP93 , 13009 , KSR1002 , KSR1003 , KSR1004 , KSR1005 , KSR1006 , KSR1007 , KSR1008 , KSR1009 .

Keywords - KSR1001 transistor datasheet

 KSR1001 cross reference
 KSR1001 equivalent finder
 KSR1001 lookup
 KSR1001 substitution
 KSR1001 replacement

 

 
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