All Transistors. 2N40 Datasheet

 

2N40 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N40

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.008 A

Max. Operating Junction Temperature (Tj): 100 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO22

2N40 Transistor Equivalent Substitute - Cross-Reference Search

 

2N40 Datasheet (PDF)

1.1. 2n408.pdf Size:310K _rca

2N40

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1.2. 2n409.pdf Size:129K _rca

2N40

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 1.3. 2n407.pdf Size:135K _rca

2N40

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1.4. 3907 2n404.pdf Size:326K _rca

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 1.5. 2n405.pdf Size:346K _rca

2N40

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1.6. 2n406.pdf Size:338K _rca

2N40

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1.7. 2n404-a.pdf Size:302K _rca

2N40

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1.8. tmu2n40.pdf Size:338K _update

2N40
2N40

TMD2N40/TMU2N40 TMD2N40G/TMU2N40G VDSS = 440 V @Tjmax Features ID = 2A  Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V  100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V  Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD2N40 /

1.9. tmt2n40g.pdf Size:327K _update

2N40
2N40

TMT2N40G VDSS = 440 V @Tjmax Features ID = 2A  Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V  100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V  Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V  RoHS compliant  Halogen free package  JEDEC Qualification D D S G D G S Device Package Marking TMT2N40G SOT223 TMT2N40G Absolute Maximum Ra

1.10. 2n4033ub.pdf Size:246K _upd

2N40
2N40

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 JAN 2N4033UA JANTX 2N4033UB JANTXV JANS

1.11. tmd2n40.pdf Size:338K _upd-mosfet

2N40
2N40

TMD2N40/TMU2N40 TMD2N40G/TMU2N40G VDSS = 440 V @Tjmax Features ID = 2A  Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V  100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V  Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD2N40 /

1.12. msf2n40.pdf Size:922K _upd-mosfet

2N40
2N40

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • BVDSS=400V typically @ Tj=150°C • Low On

1.13. mtd2n40erev0x.pdf Size:268K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N40E/D Designer's? Data Sheet MTD2N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET DPAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 2.0 AMPERES 400 VOLTS This advanced high voltage TMOS E–FET is designed to RDS(on) = 3.5 OHM withstand high energy in the avalanche and switch

1.14. mtp2n40erev0bx.pdf Size:217K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's? Data Sheet MTP2N40E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage–blocking capability without 400 VOLTS degrading performa

1.15. mtb2n40e.pdf Size:271K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2N40E/D Designer's? Data Sheet MTB2N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 2.0 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 3.8 OHM than any existing surface mount package

1.16. 2n4036 2n4037.pdf Size:86K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Silicon 2N4036 COLLECTOR 2N4037 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector–Emitter Voltage VCEO –65 –40 Vdc 3 2 1 Collector–Base Voltage VCBO –90 –60 Vdc CASE 79–04, STYLE 1 Emitter–Base Voltage VEBO –7.0 –7.0 Vdc TO–39 (TO–205AD) Base Curr

1.17. 2n4036-37.pdf Size:86K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Silicon 2N4036 COLLECTOR 2N4037 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector–Emitter Voltage VCEO –65 –40 Vdc 3 2 1 Collector–Base Voltage VCBO –90 –60 Vdc CASE 79–04, STYLE 1 Emitter–Base Voltage VEBO –7.0 –7.0 Vdc TO–39 (TO–205AD) Base Curr

1.18. mtd2n40e.pdf Size:230K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N40E/D Designer's? Data Sheet MTD2N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET DPAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 2.0 AMPERES 400 VOLTS This advanced high voltage TMOS E–FET is designed to RDS(on) = 3.5 OHM withstand high energy in the avalanche and switch

1.19. mtp2n40e.pdf Size:187K _motorola

2N40
2N40

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's? Data Sheet MTP2N40E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage–blocking capability without 400 VOLTS degrading performa

1.20. 2n4036.pdf Size:51K _philips

2N40
2N40

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistor 2N4036 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APP

1.21. 2n4031 2n4033.pdf Size:52K _philips

2N40
2N40

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4031; 2N4033 PNP medium power transistors 1997 May 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium power transistors 2N4031; 2N4033 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V).

1.22. phx2n40e 1.pdf Size:24K _philips2

2N40
2N40

Philips Semiconductors Objective specification PowerMOS transistor PHX2N40E Isolated version of PHP4N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.4 A blocking voltage

1.23. php2n40 1.pdf Size:57K _philips2

2N40
2N40

Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.5 A off-state characteristics, fast Ptot Total power dissipation

1.24. php2n40e 1.pdf Size:20K _philips2

2N40
2N40

Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.5 A blocking voltage, fast switching and Ptot Total power diss

1.25. 2n4033.pdf Size:489K _st

2N40
2N40

2N4033 ® SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -80 V VCEO Collector-Emitter Voltage (IB = 0) -80 V V Emitter

1.26. fqd2n40tf fqd2n40tm.pdf Size:723K _fairchild_semi

2N40
2N40

April 2000 TM QFET QFET QFET QFET FQD2N40 / FQU2N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.4A, 400V, RDS(on) = 5.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technolog

1.27. fqp2n40.pdf Size:989K _fairchild_semi

2N40
2N40

October 2013 FQP2N40 N-Channel QFET® MOSFET 400 V, 1.8 A, 5.8 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.8 A, 400 V, RDS(on) = 5.8 Ω (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

1.28. fqpf2n40.pdf Size:725K _fairchild_semi

2N40
2N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.1A, 400V, RDS(on) = 5.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has bee

1.29. 2n4036 2n4037.pdf Size:492K _central

2N40
2N40

2N4036 2N4037 www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4036 2N4037 UNITS Collector-Base Voltage VCBO 90 60 V Collector-Emitter V

1.30. 12n40.pdf Size:162K _utc

2N40
2N40

UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1 also c

1.31. 2n40.pdf Size:172K _utc

2N40
2N40

UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance. It also can withstand high energy pulse in the avalanche.

1.32. 2n4006 2n4007 2n4008 2n4009 2n4010 2n4011.pdf Size:114K _no

2N40

www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

1.33. 2n4028.pdf Size:10K _semelab

2N40

2N4028 Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV a

1.34. 2n4000.pdf Size:11K _semelab

2N40

2N4000 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

1.35. 2n4027.pdf Size:10K _semelab

2N40

2N4027 Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV a

1.36. 2n4001.pdf Size:11K _semelab

2N40

2N4001 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.37. 2n4037.pdf Size:197K _cdil

2N40
2N40

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO(sus) * Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEB

1.38. 2n4036.pdf Size:120K _cdil

2N40
2N40

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR 2N4036 TO-39 General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 65 V Collector -Base Voltage VCBO 90 V Emitter Base Voltage VEBO 7.0 V Base Current IB 0.5 A Collector Current -Continuous IC 1.0 A Power D

1.39. 2n4030 1 2 3.pdf Size:203K _cdil

2N40
2N40

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4030, 2N4031 2N4032, 2N4033 TO-39 Metal Can Package 2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N4030,32 2N4031, 33 UNITS VCEO Collector Emitter Vol

1.40. kmb012n40da.pdf Size:395K _kec

2N40
2N40

SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +

1.41. 2n4030-33.pdf Size:143K _microelectronics

2N40
2N40

1.42. 2n3707-09 2n3710-11 2n4058-59 2n4060-62.pdf Size:137K _microelectronics

2N40
2N40

1.43. 2n4029.pdf Size:39K _microelectronics

2N40

1.44. 2n4091 2n4092 2n4093.pdf Size:50K _microsemi

2N40
2N40

TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 Devices Qualified Level JANTX 2N4091 2N4092 2N4093 JANTXV ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V -40 V GS Drain-Source Voltage V 40 V DS Drain-Gate Voltage VDG 40 V Gate Current I 10 mAdc G (1) Power Dissipatio

1.45. 2n4003k.pdf Size:1047K _wietron

2N40
2N40

2N4003K 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 1 0.5 AMPERES GATE P b Lead(Pb)-Free * DRAIN SOUCE VOLTAGE * Gate 30 VOLTAGE Pretection Features: Diode SOURCE 2 * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. 3 * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. 1 2 App

1.46. 2n4003nlt1.pdf Size:379K _willas

2N40
2N40

FM120-M WILLAS THRU 2N4003NLT1 Small Signal MOSFET 30V,0.56A, Single, SOT-23 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order

1.47. aot12n40.pdf Size:305K _aosemi

2N40
2N40

AOT12N40 400V,11A N-Channel MOSFET General Description Product Summary VDS 500V@150℃ The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) <0.59Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche c

1.48. ap02n40h-hf.pdf Size:98K _a-power

2N40
2N40

AP02N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ 100% Avalanche Test D BVDSS 400V ÐŽ Fast Switching Characteristic RDS(ON) 5? ÐŽ Simple Drive Requirement ID 1.6A G ÐŽ RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

1.49. ap02n40k-hf.pdf Size:94K _a-power

2N40
2N40

AP02N40K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ 100% Avalanche Test D BVDSS 400V ÐŽ Fast Switching Characteristic RDS(ON) 5.5? ÐŽ Simple Drive Requirement ID 0.45A G ÐŽ RoHS Compliant & Halogen-Free S D Description AP02N40 uses rugged design with the best combination of fast S switching and cost-effectiveness. D G The SO

1.50. ap02n40p.pdf Size:92K _a-power

2N40
2N40

AP02N40P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ 100% Avalanche Test D BVDSS 400V ÐŽ Fast Switching Characteristic RDS(ON) 5? ÐŽ Simple Drive Requirement ID 1.6A G S Description G AP02N40 uses rugged design with the best combination of fast TO-220(P) D S switching and cost-effectiveness. The TO-220 package is widely preferr

1.51. ap02n40h.pdf Size:194K _a-power

2N40
2N40

AP02N40H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test D BVDSS 400V ▼ Fast Switching Characteristic RDS(ON) 5Ω ▼ Simple Drive Requirement ID 1.6A G ▼ RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 series are from Advanced Power innovated design and silicon process technology to

1.52. ap02n40i-hf.pdf Size:93K _a-power

2N40
2N40

AP02N40I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ 100% Avalanche Test D BVDSS 400V ÐŽ Fast Switching Characteristic RDS(ON) 5? ÐŽ Simple Drive Requirement ID 1.6A G ÐŽ RoHS Compliant & Halogen-Free S Description AP02N40 uses rugged design with the best combination of fast G switching and cost-effectiveness. D TO-220CFM(I) S

1.53. ap02n40j-hf.pdf Size:98K _a-power

2N40
2N40

AP02N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ 100% Avalanche Test D BVDSS 400V ÐŽ Fast Switching Characteristic RDS(ON) 5? ÐŽ Simple Drive Requirement ID 1.6A G ÐŽ RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

1.54. msf2n40.pdf Size:922K _bruckewell

2N40
2N40

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • BVDSS=400V typically @ Tj=150°C • Low On

Datasheet: 2N3996 , 2N3996SM , 2N3997 , 2N3997SM , 2N3998 , 2N3998SM , 2N3999 , 2N3999SM , 2N2907 , 2N400 , 2N4000 , 2N4001 , 2N4002 , 2N4003 , 2N4004 , 2N4005 , 2N4006 .

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