KSR1009 PDF and Equivalents Search

 ..1. Size:38K  samsung

 ksr1009.pdf

KSR1009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR2009 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VE... See More ⇒

 8.1. Size:42K  samsung

 ksr1008.pdf

KSR1008 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR2008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒

 8.2. Size:43K  samsung

 ksr1007.pdf

KSR1007 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=47 ) Complement to KSR2007 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒

 8.3. Size:42K  samsung

 ksr1006.pdf

KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒

 8.4. Size:43K  samsung

 ksr1005.pdf

KSR1005 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=10 ) Complement to KSR2005 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base V... See More ⇒

 8.5. Size:43K  samsung

 ksr1002.pdf

KSR1002 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=10 ) Complement to KSR2002 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒

 8.6. Size:42K  samsung

 ksr1001.pdf

KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=4.7 ) Complement to KSR2001 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base ... See More ⇒

 8.7. Size:42K  samsung

 ksr1004.pdf

KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR2004 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒

 8.8. Size:41K  samsung

 ksr1003.pdf

KSR1003 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=22 ) Complement to KSR2003 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo... See More ⇒