All Transistors. KSR1012 Datasheet

 

KSR1012 Datasheet and Replacement


   Type Designator: KSR1012
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

 KSR1012 Substitution

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KSR1012 Datasheet (PDF)

 ..1. Size:20K  samsung
ksr1012.pdf pdf_icon

KSR1012

KSR1012 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR2012ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEB

 8.1. Size:42K  samsung
ksr1010.pdf pdf_icon

KSR1012

KSR1010 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2010ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEB

 8.2. Size:21K  samsung
ksr1011.pdf pdf_icon

KSR1012

KSR1011 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR2011ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEB

 9.1. Size:42K  samsung
ksr1008.pdf pdf_icon

KSR1012

KSR1008 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR2008ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Vo

Datasheet: KSR1004 , KSR1005 , KSR1006 , KSR1007 , KSR1008 , KSR1009 , KSR1010 , KSR1011 , A733 , KSR1101 , KSR1102 , KSR1104 , KSR1105 , KSR1106 , KSR1107 , KSR1108 , KSR1109 .

History: BF787 | BSY63 | 2SD2495Y | 2SD30 | AF339 | 2SB50

Keywords - KSR1012 transistor datasheet

 KSR1012 cross reference
 KSR1012 equivalent finder
 KSR1012 lookup
 KSR1012 substitution
 KSR1012 replacement

 

 
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