KSR1106 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

KSR1106 Specs and Replacement

Type Designator: KSR1106

SMD Transistor Code: R06

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SOT23

KSR1106 Substitution

- BJT ⓘ Cross-Reference Search

KSR1106 datasheet

..1. Size:68K samsung

ksr1106.pdf pdf_icon

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8.1. Size:54K fairchild semi

ksr1107.pdf pdf_icon

KSR1107 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =22K , R2=47K ) Complement to KSR2107 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R07 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted ... See More ⇒

8.2. Size:49K fairchild semi

ksr1109.pdf pdf_icon

KSR1109 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to KSR2109 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R09 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter... See More ⇒

8.3. Size:53K fairchild semi

ksr1105.pdf pdf_icon

KSR1105 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K , R2=10K ) Complement to KSR2105 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R05 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted ... See More ⇒