KSR2006 PDF and Equivalents Search

 

KSR2006 Specs and Replacement

Type Designator: KSR2006

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: TO92

 KSR2006 Substitution

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KSR2006 datasheet

 ..1. Size:42K  samsung

ksr2006.pdf pdf_icon

KSR2006

KSR2006 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR1006 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base ... See More ⇒

 8.1. Size:34K  fairchild semi

ksr2005.pdf pdf_icon

KSR2006

KSR2005 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to KSR1005 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Va... See More ⇒

 8.2. Size:42K  samsung

ksr2008.pdf pdf_icon

KSR2006

KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR1008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base ... See More ⇒

 8.3. Size:42K  samsung

ksr2004.pdf pdf_icon

KSR2006

KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base V... See More ⇒

Detailed specifications: KSR1112, KSR1113, KSR1114, KSR2001, KSR2002, KSR2003, KSR2004, KSR2005, TIP127, KSR2007, KSR2008, KSR2009, KSR2010, KSR2011, KSR2011F, KSR2012, KSR2012F

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