All Transistors. KSR2008 Datasheet

 

KSR2008 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KSR2008
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: TO92

 KSR2008 Transistor Equivalent Substitute - Cross-Reference Search

   

KSR2008 Datasheet (PDF)

 ..1. Size:42K  samsung
ksr2008.pdf

KSR2008
KSR2008

KSR2008 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR1008ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.1. Size:34K  fairchild semi
ksr2005.pdf

KSR2008
KSR2008

KSR2005Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to KSR1005TO-9211. Emitter 2. Collector 3. BaseEquivalent CircuitCR1BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Va

 8.2. Size:42K  samsung
ksr2004.pdf

KSR2008
KSR2008

KSR2004 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base V

 8.3. Size:42K  samsung
ksr2003.pdf

KSR2008
KSR2008

KSR2003 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver CircuitTO-92 Built in bias Resistor (R1=22 , R2=22 ) Complement to KSR1003ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.4. Size:42K  samsung
ksr2002.pdf

KSR2008
KSR2008

KSR2002 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=10 ) Complement to KSR1002ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.5. Size:42K  samsung
ksr2006.pdf

KSR2008
KSR2008

KSR2006 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR1006ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.6. Size:42K  samsung
ksr2001.pdf

KSR2008
KSR2008

KSR2001 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=4.7 ) Complement to KSR1001ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Bas

 8.7. Size:41K  samsung
ksr2007.pdf

KSR2008
KSR2008

KSR2007 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=47 ) Complement to KSR1007ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.8. Size:45K  samsung
ksr2009.pdf

KSR2008
KSR2008

KSR2009 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR1009ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KSR1113

 

 
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