KSR2110 Datasheet, Equivalent, Cross Reference Search

   Type Designator: KSR2110
   SMD Transistor Code: R60
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

KSR2110 Transistor Equivalent Substitute - Cross-Reference Search

KSR2110 Datasheet (PDF)

..1. Size:61K samsung
ksr2110.pdf

8.1. Size:43K fairchild semi
ksr2111.pdf

KSR2111Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to KSR11112SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR61 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter V

8.2. Size:34K samsung
ksr2113.pdf