KSR2114 PDF and Equivalents Search

 

KSR2114 Specs and Replacement

Type Designator: KSR2114

SMD Transistor Code: R64

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SOT23

 KSR2114 Substitution

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KSR2114 datasheet

 ..1. Size:35K  samsung

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KSR2114

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 8.1. Size:43K  fairchild semi

 ksr2111.pdf pdf_icon

KSR2114

KSR2111 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to KSR1111 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R61 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter V... See More ⇒

 8.2. Size:34K  samsung

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KSR2114

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 8.3. Size:61K  samsung

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KSR2114

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Detailed specifications: KSR2106, KSR2107, KSR2108, KSR2109, KSR2110, KSR2111, KSR2112, KSR2113, 2SD669A, KST05, KST06, KST10, KST1009F1, KST1009F2, KST1009F3, KST1009F4, KST1009F5

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