KSR2114 Datasheet, Equivalent, Cross Reference Search

   Type Designator: KSR2114
   SMD Transistor Code: R64
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SOT23

KSR2114 Transistor Equivalent Substitute - Cross-Reference Search

KSR2114 Datasheet (PDF)

..1. Size:35K samsung
ksr2114.pdf

8.1. Size:43K fairchild semi
ksr2111.pdf

KSR2111Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to KSR11112SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR61 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter V

8.2. Size:34K samsung
ksr2113.pdf