All Transistors. KST812M4 Datasheet

 

KST812M4 Datasheet and Replacement


   Type Designator: KST812M4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO236
 

 KST812M4 Substitution

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KST812M4 Datasheet (PDF)

 7.1. Size:52K  samsung
 kst812m3 7.pdf pdf_icon

KST812M4

KST812M7S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (KST812M7)

Datasheet: KST5179 , KST55 , KST5550 , KST56 , KST63 , KST64 , KST6428 , KST812M3 , BC337 , KST812M5 , KST812M6 , KST812M7 , KST812M8 , KST92 , KST93 , KSY34 , KSY62 .

Keywords - KST812M4 transistor datasheet

 KST812M4 cross reference
 KST812M4 equivalent finder
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