2N4008 Specs and Replacement
Type Designator: 2N4008
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO46
2N4008 Substitution
- BJT ⓘ Cross-Reference Search
2N4008 datasheet
2n4006 2n4007 2n4008 2n4009 2n4010 2n4011.pdf 
www.DataSheet.co.kr Datasheet pdf - http //www.DataSheet4U.net/ ... See More ⇒
2N4000 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
2N4001 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3... See More ⇒
2N4003K 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 1 0.5 AMPERES GATE P b Lead(Pb)-Free * DRAIN SOUCE VOLTAGE * Gate 30 VOLTAGE Pretection Features Diode SOURCE 2 * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. 3 * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. 1 2 ... See More ⇒
Detailed specifications: 2N4000, 2N4001, 2N4002, 2N4003, 2N4004, 2N4005, 2N4006, 2N4007, 2SC1815, 2N4009, 2N401, 2N4010, 2N4011, 2N4012, 2N4013, 2N4014, 2N4015
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