KT214E9 PDF and Equivalents Search

KT214E9 Specs and Replacement

Type Designator: KT214E9

SMD Transistor Code: КТ214Е9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT214E9 datasheet

Detailed specifications: KT209M, KT209V, KT210A, KT210B, KT210V, KT214A9, KT214B9, KT214D9, 2SC828, KT214G9, KT214V9, KT215A9, KT215B9, KT215D9, KT215E9, KT215G9, KT215V9

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