KT214G9 Specs and Replacement
Type Designator: KT214G9
SMD Transistor Code: КТ214Г9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT214G9 Substitution
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KT214G9 datasheet
Detailed specifications: KT209V, KT210A, KT210B, KT210V, KT214A9, KT214B9, KT214D9, KT214E9, 431, KT214V9, KT215A9, KT215B9, KT215D9, KT215E9, KT215G9, KT215V9, KT216A
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