KT215E9 PDF and Equivalents Search

KT215E9 Specs and Replacement

Type Designator: KT215E9

SMD Transistor Code: КТ215Е9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT215E9 datasheet

Detailed specifications: KT214B9, KT214D9, KT214E9, KT214G9, KT214V9, KT215A9, KT215B9, KT215D9, BD136, KT215G9, KT215V9, KT216A, KT216B, KT216V, KT218A9, KT218B9, KT218D9

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