KT215G9 Specs and Replacement
Type Designator: KT215G9
SMD Transistor Code: КТ215Г9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT215G9 Substitution
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KT215G9 datasheet
Detailed specifications: KT214D9, KT214E9, KT214G9, KT214V9, KT215A9, KT215B9, KT215D9, KT215E9, TIP120, KT215V9, KT216A, KT216B, KT216V, KT218A9, KT218B9, KT218D9, KT218E9
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