KT216B Specs and Replacement
Type Designator: KT216B
SMD Transistor Code: КТ216Б
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT23
KT216B Substitution
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KT216B datasheet
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Detailed specifications: KT214V9, KT215A9, KT215B9, KT215D9, KT215E9, KT215G9, KT215V9, KT216A, D667, KT216V, KT218A9, KT218B9, KT218D9, KT218E9, KT218G9, KT218V9, KT301
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