KT306B Specs and Replacement
Type Designator: KT306B
SMD Transistor Code: КТ306Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT306B Substitution
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KT306B datasheet
Detailed specifications: KT301J, KT301V, KT302A, KT302B, KT302G, KT302V, KT306A, KT306AM, A1015, KT306BM, KT306D, KT306DM, KT306G, KT306GM, KT306V, KT306VM, KT3101A-2
Keywords - KT306B pdf specs
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