KT306V Specs and Replacement
Type Designator: KT306V
SMD Transistor Code: КТ306В
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT306V Substitution
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KT306V datasheet
Detailed specifications: KT306A, KT306AM, KT306B, KT306BM, KT306D, KT306DM, KT306G, KT306GM, TIP42C, KT306VM, KT3101A-2, KT3101AM, KT3102A, KT3102AM, KT3102B, KT3102BM, KT3102D
Keywords - KT306V pdf specs
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History: 2DC4672 | DTA143EE | BSY81 | KSP92 | 2SA80
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