KT312V Specs and Replacement

Type Designator: KT312V

SMD Transistor Code: КТ312В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

 KT312V Substitution

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KT312V datasheet

 9.1. Size:694K  russia

 kt3120a 2t3120a.pdf pdf_icon

KT312V

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 9.2. Size:893K  russia

 kt312a-b-v 2t312a-b-v.pdf pdf_icon

KT312V

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Detailed specifications: KT3128B-1, KT3129A9, KT3129B9, KT3129D9, KT3129G9, KT3129V9, KT312A, KT312B, B647, KT3130A9, KT3130B9, KT3130D9, KT3130E9, KT3130G9, KT3130J9, KT3130V9, KT3132A-2

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