KT3130D9 Specs and Replacement
Type Designator: KT3130D9
SMD Transistor Code: КТ3130Д9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
KT3130D9 Substitution
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KT3130D9 datasheet
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Detailed specifications: KT3129D9, KT3129G9, KT3129V9, KT312A, KT312B, KT312V, KT3130A9, KT3130B9, BD333, KT3130E9, KT3130G9, KT3130J9, KT3130V9, KT3132A-2, KT3132B-2, KT3132D-2, KT3132E-2
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