KT3130E9 Specs and Replacement

Type Designator: KT3130E9

SMD Transistor Code: КТ3130Е9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

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KT3130E9 datasheet

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Detailed specifications: KT3129G9, KT3129V9, KT312A, KT312B, KT312V, KT3130A9, KT3130B9, KT3130D9, BDT88, KT3130G9, KT3130J9, KT3130V9, KT3132A-2, KT3132B-2, KT3132D-2, KT3132E-2, KT3132G-2

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