KT3132E-2 Specs and Replacement

Type Designator: KT3132E-2

SMD Transistor Code: КТ3132Е-2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.07 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.0085 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5500 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

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KT3132E-2 datasheet

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Detailed specifications: KT3130D9, KT3130E9, KT3130G9, KT3130J9, KT3130V9, KT3132A-2, KT3132B-2, KT3132D-2, 2N2222, KT3132G-2, KT3132V-2, KT3139A, KT3139B, KT3139G, KT3139V, KT313A, KT313A-1

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