KT315N Specs and Replacement
Type Designator: KT315N
SMD Transistor Code: КТ315Н
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 120 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
KT315N Substitution
- BJT ⓘ Cross-Reference Search
KT315N datasheet
Detailed specifications: KT315E, KT315E-1, KT315G, KT315G-1, KT315I, KT315I-1, KT315J, KT315J-1, 8550, KT315N-1, KT315R, KT315R-1, KT315V, KT315V-1, KT3162A, KT3162A-5, KT3165A
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