KT325VM Specs and Replacement
Type Designator: KT325VM
SMD Transistor Code: КТ325ВМ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
KT325VM Substitution
- BJT ⓘ Cross-Reference Search
KT325VM datasheet
Detailed specifications: KT321E, KT321G, KT321V, KT325A, KT325AM, KT325B, KT325BM, KT325V, S8050, KT326A, KT326AM, KT326B, KT326BM, KT333A-3, KT333B-3, KT333D-3, KT333E-3
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