KT325VM Datasheet and Replacement

   Type Designator: KT325VM
   SMD Transistor Code: КТ325ВМ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search